MSF20N50 n - channel enhancement mode power mosfet publication order number: [ MSF20N50 ] ? bruckewell technology corporation rev. a - 2014 description the msf 20 n 5 0 is a n - channel enhancement - mode mosfet , providing the designer with the best combination of fast switching, ruggedized device design, low on - resistance and cost effectiveness. the to - 220f package is universally preferred for all c om mercial - industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? rohs compliant package application ? switching mode power supply ? lcd panel power ? adapter ? e - bike charger pa cking & order information 50/tube ; 1,000/box graphic symbol maximum ratings and electrical characteristics absolute maximum ratings symbol parameter value unit v ds drain - source voltage 5 00 v v gs gate - source voltage 30 v i d continuous dr ain current (tc=25 c ) 20 a continuous drain current (tc= 100 c ) 13 a i dm drain current pulsed 80 a e as s ingle pulsed avalanche energy 1100 mj e ar repetitive avalanche energy 2 8 mj dv/dt peak diode recovery dv/dt 4.5 v/ns tj, tstg operating junction a nd storage temperature - 55~+150 c ? drain current limited by maximum junction temperature
MSF20N50 n - channel enhancement mode power mosfet publication order number: [ MSF20N50 ] ? bruckewell technology corporation rev. a - 2014 absolute maximum ratings symbol parameter value unit p d power dissipation (tc= 25 c) power dissipation (tc=100c) 40 w 0.35 w note: 1. repetitive rating; pul se width limited by maximum junction temperature. thermal characteristics symbol parameter max. unit s rthjc typical thermal resistance 3.3 c /w r ja 62.5 static characteristics symbol test conditions min typ. max. unit s v gs v ds = v gs , i d =250a 2.0 4.0 v *r ds(on) v gs = 1 0v , i d = 9.0a -- 0.21 0.26 m b v dss v gs =0 v , i d =250a 500 -- -- v b v dss / t j i d =250a, referenced to 25 c 0.5 i dss v d s = 50 0v , v gs = 0 v v ds = 40 0v , v gs = 0 v , t j = 125 c -- -- 1 10 u a i gss f v ds = 3 0v, v d s = 0 v 100 n a i gss r v ds = - 3 0v, v d s = 0 v -- -- - 100 n a dynamic characteristics symbol parameter test conditions min typ. max. unit s c iss input capacitance v ds =25v, v gs = 0v, f=1.0mhz -- 2700 -- pf c oss output capacitance -- 400 -- pf c rss reverse transfer capacitance -- 40 -- pf t d(on) turn - on time v ds = 25 0 v, i d = 20 a, r g = 25 -- 100 -- ns t r turn - on time -- 400 -- ns t d(off) turn - off delay time -- 100 -- ns tf turn - off fall time -- 100 -- ns q g total gate charge v ds = 400 v,i d = 20a , v gs = 10 v -- 70 -- nc q gs gate - source charge -- 18 -- nc q g d gate - drain charge (miller ch arge) -- 35 -- nc
MSF20N50 n - channel enhancement mode power mosfet publication order number: [ MSF20N50 ] ? bruckewell technology corporation rev. a - 2014 source - drain diode characteristics symbol test conditions min typ. max. unit s i s -- -- 20 a i sm -- -- 80 v sd if= 18a , v gs =0 -- -- 1.5 v t rr if= 18a , v gs =0 , dif/dt=100a/s -- 550 -- ns q rr -- 7.2 -- uc note: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l= 5.5mh,ias= 20.0a,vdd=50v,rg=25,starting tj=25c 3. isd 20.0 a, di/dt 200a/s, vdd bvdss, starting tj = 25c 4. pulse test : pulse width 300s, duty cycle 2% 5. essentially indepe ndent of operating temperature
MSF20N50 n - channel enhancement mode power mosfet publication order number: [ MSF20N50 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig.1 - on region characteristics fig. 2 - transfer characteristics fig.3 - on resistance variation vs drain current and gate voltage fig.4 - body diode forward voltage variatio n with source current and temperature fig.5 - capacitance characteristics fig.6 - gate charge characteristics
MSF20N50 n - channel enhancement mode power mosfet publication order number: [ MSF20N50 ] ? bruckewell technology corporation rev. a - 2014 characteristics curve fig. 7 - breakdown voltage variation vs temperature fig. 8 - on - resistance variation vs temperature fig. 9 - maximum safe operating area fig. 10 - maximum drain current vs case temperature fig.11 - transient thermal response curve
MSF20N50 n - channel enhancement mode power mosfet publication order number: [ MSF20N50 ] ? bruckewell technology corporation rev. a - 2014 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. bruckewell technology inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, bruckewell), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in an y other disclosure relating to any product. bruckewell makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by appli cable law, bruckewell disclaims (i) any and all liability arising out of the application or use of any product. (ii) any and all liability, including without limitation special, consequential or incidental damages. (iii) any and all implied warranties, in cluding warranties of fitness for particular purpose, non - infringement and merchantability. statements regarding the suitability of products for certain types of applications are based on bruckewells knowledge of typical requirements that are often placed on bruckewell products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsibility to validate that a particular product with the properties descr ibed in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. product specifications do not expand or other wise modify bruckewells terms and conditions of purchase, including but not limited to the warranty expressed therein.
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